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  篇名 作者 主题词 文摘
  二次检索范围  26 篇文章
     
     
 
Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131101-1311015
       
 
Real-space mapping of nanoplasmonic hotspots via optical antenna-gap loading

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131102-1311024
       
 
GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131103-1311034
       
 
Single-wavelength, all-optical switching based on exciton-polaritons

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131104-1311044
       
 
Surface label-free sensing by means of a fluorescent multilayered photonic structure

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131105-1311054
       
 
Broadband super-Planckian thermal emission from hyperbolic metamaterials

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131106-1311065
       
 
Influencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineering

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131107-1311074
       
 
Record-low propagation losses of 154?dB/cm for substrate-type W1 photonic crystal waveguides by means of hole shape engineering

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131108-1311084
       
 
Direct observation of the terahertz optical free induction decay of molecular rotation absorption lines in the sub-nanosecond time scale

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131109-1311094
       
 
Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1?ySny (y?=?0.06%) grown on n-Si substrate

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 101 Issue: 13 Page: 131110-1311105
       
 
 
   
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