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篇名
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文摘
二次检索范围 87 篇文章
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Strongly coupled single quantum dot in a photonic crystal waveguide cavity
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111101-111098
Many-body and nonequilibrium effects on relaxation oscillations in a quantum-dot microcavity laser
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111102-1111023
Photoluminescence quenching dynamics in cadmium telluride and gallium arsenide induced by ultrashort terahertz pulse
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111103-111100
Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111104-111101
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111105-111102
Superconducting plasmonics and extraordinary transmission
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111106-111103
Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111107-1111073
Toward remote high energy terahertz generation
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111108-1111083
Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3μm GaInAsN/GaAs quantum well structures
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111109-1111093
Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3?μm GaInAsN/GaAs quantum well structures
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 11 Page: 111109-1111093
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