欢迎您
guest
|
注销
|
立即注册!
|
English
|
帮助
|
联系我们
篇名
作者
主题词
文摘
二次检索范围 92 篇文章
篇名
文摘
全文
主题词
作者
刊名
ISSN
Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31101-31098
Efficient photon number detection with silicon avalanche photodiodes
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31102-31099
Excitonic electroluminescence at room temperature in an (In,Ga)As multiple-quantum-well diode
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31103-31100
Giant Stark effect in the emission of single semiconductor quantum dots
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31104-31101
Polariton parametric oscillation in a single micropillar cavity
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31105-311053
Whispering-gallery-mode terahertz pulse propagation on a curved metallic plate
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31106-311063
Generation of two-color continuous variable quantum entanglement at 0.8 and 1.5μm
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31107-31104
High peak power λ∼3.3 and 3.5μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31108-31105
High numerical aperture microlens arrays of close packing
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31109-311093
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
Publisher: American Institute of Physics
Journal:
Applied Physics Letters
Volume: 97 Issue: 3 Page: 31110-31107
版权所有©中国图书进出口(集团)总公司
