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二次检索范围  98 篇文章

篇名 文摘 全文 主题词 作者 刊名 ISSN

Native-oxide-confined high-index-contrast =1.15  μm strain-compensated InGaAs single quantum well ridge waveguide lasers Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Tunable transmission and harmonic generation in nonlinear metamaterials Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Study of nanoprecipitates in a nickel-based superalloy using small-angle neutron scattering and transmission electron microscopy Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Electron diffraction with ten nanometer beam size for strain analysis of nanodevices Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Anisotropic in-plane strains in nonpolar AlN and AlGaN (110) films grown on SiC (110) substrates Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Splitting of valance subbands in the wurtzite c-plane InGaN/GaN quantum well structure Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20% Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0           Solvent effects and multiple aggregate states in high-mobility organic field-effect transistors based on poly(bithiophene-alt-thienothiophene) Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 93 Issue: 16 Page: 0-0

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