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  篇名 作者 主题词 文摘
  二次检索范围  68 篇文章
     
     
 
Fabrication of Si1?xGex alloy nanowire field-effect transistors

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Orientation-controlled molecule-by-molecule polymer wire growth by the carrier-gas-type organic chemical vapor deposition and the molecular layer deposition

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Low-frequency charge noise in suspended aluminum single-electron transistors

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Two-dimensional slicing method to speed up the fabrication of micro-objects based on two-photon polymerization

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Evolution of InAs nanostructures grown by droplet epitaxy

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Charge characterization in metal-gate/high- layers: Effect of post-deposition annealing and gate electrode

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Low frequency noise in highly sensitive magnetic tunnel junctions with (001) MgO tunnel barrier

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0
       
 
Fabrication and characterization of metal-molecule-silicon devices

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 91 Issue: 3 Page: 0-0