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二次检索范围 124 篇文章

	High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Increased terahertz emission from thermally treated GaSb Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Structural and electrical properties of trimethylboron-doped silicon nanowires Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Description of unconventional electronic transport in mesoscopic structures Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Pt/ZnO nanowire Schottky diodes Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Kink effect in short-channel polycrystalline silicon thin-film transistors Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Subpicosecond exciton spin relaxation in GaN Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

	Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1–xN/GaN heterostructures with two subbands occupation Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 85 Issue: 15 Page: 0-0

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