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  篇名 作者 主题词 文摘
  二次检索范围  102 篇文章
     
     
 
20 μm cutoff heterojunction interfacial work function internal photoemission detectors

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Optical attenuation signatures of Bacillus subtillis in the THz region

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Piezoelectric response of engineered domains in ferroelectrics

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Cyclic surface morphology change related to Li ion movement in Li secondary microbattery embedded in Si substrate: Atomic force microscopy studies

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Luminescence from processible quantum dot-polymer light emitters 1100–1600 nm: Tailoring spectral width and shape

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Electronic structure of ZnO nanorods studied by angle-dependent x-ray absorption spectroscopy and scanning photoelectron microscopy

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
Coherent terahertz emission from ferromagnetic films excited by femtosecond laser pulses

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0
       
 
p-type behavior in phosphorus-doped (Zn,Mg)O device structures

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 84 Issue: 18 Page: 0-0