欢迎您 guest   |    注销   |    立即注册!   |    English    |   帮助   |   联系我们
  篇名 作者 主题词 文摘
  二次检索范围  85 篇文章
     
     
 
2.8 and 1.55  μm emission from diode-pumped Er3+-doped and Yb3+ co-doped lead lanthanum zirconate titanate transparent ferroelectric ceramic

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Optical properties of single droplet of photonic crystal assembled by ink-jet printing

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Detection and identification of explosives using terahertz pulsed spectroscopic imaging

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Electromigration-induced grain rotation in anisotropic conducting beta tin

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Enhanced annihilations of self-interstitial clusters by vacancies transported through vehicle action of Cu in Cu-implanted silicon crystals

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Effects of electromigration-induced void dynamics on the evolution of electrical resistance in metallic interconnect lines

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Measure of disorder in tetrahedrally bonded semiconductors

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0
       
 
Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 86 Issue: 24 Page: 0-0