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  篇名 作者 主题词 文摘
  二次检索范围  65 篇文章
     
     
 
Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Reversible hydriding and dehydriding properties of CaSi: Potential of metal silicides for hydrogen storage

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Stress map for ion irradiation: Depth-resolved dynamic competition between radiation-induced viscoelastic phenomena in SiO2

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Reconciliation of ab initio theory and experimental elastic properties of Al2O3

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Tunable absorption of Au–Al2O3 nanocermet thin films and its morphology

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Importance of dewetting in organic molecular-beam deposition: Pentacene on gold

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Hydrogen diffusion as the rate-limiting mechanism of stress development in dielectric films

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0
       
 
Nickel silicidation on n and p-type junctions at 300  °C

Publisher: American Institute of Physics
Journal: Applied Physics Letters
Volume: 85 Issue: 3 Page: 0-0