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二次检索范围 93 篇文章

	Fabrication and characteristics of C84 fullerene field-effect transistors Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	Effect of nucleation layer on the magnetic properties of GaMnN Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	A distributed charge storage with GeO2 nanodots Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	High-speed operation of quasi-one junction superconducting quantum interference device based on high-Tc multilayer technology Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	Magnetic anisotropy control of SrRuO3 films by tunable epitaxial strain Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	High-coercivity Co-ferrite thin films on (100)-SiO2 substrate Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

	On the origin of spin loss in GaMnN/InGaN light-emitting diodes Publisher: American Institute of Physics Journal: Applied Physics Letters Volume: 84 Issue: 14 Page: 0-0

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